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MT47H64M8SH25EH |
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 400MHz; TFBGA60; 0÷85°C |
MICRON TECHNOLOGY |
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MT48H16M32LFB56I |
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 166MHz; VFBGA90; -40÷85°C |
MICRON TECHNOLOGY |
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MT48H16M32LFB56IT |
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 166MHz; VFBGA90; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC16M16A2B46T |
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 167MHz; VFBGA54; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AI |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 167MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AIT |
IC: DRAM memory; 64MbDRAM; 167MHz; TSOP54 II; -40÷85°C; 3÷3.6V |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AJT |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 167MHz; TSOP54 II; 0÷70°C |
MICRON TECHNOLOGY |
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MT48LC4M32B2B56A |
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 167MHz; VFBGA90; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC8M16A2P6AI |
IC: DRAM memory; 128MbDRAM; 8Mx16bit; 167MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC8M16A2P6ALT |
IC: DRAM memory; 128MbDRAM; 167MHz; TSOP54 II; 0÷70°C; 3÷3.6V |
MICRON TECHNOLOGY |
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MT52L256M32D1PF1 |
IC: DRAM memory; 8GbDRAM; 933MHz; -30÷85°C; 1.2V |
MICRON TECHNOLOGY |
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MT53D512M16D1DS0 |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; -30÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT53D512M16D1DS0I |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E128M32D2DS0 |
IC: DRAM memory; 4GbDRAM; 1.866GHz; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E128M32D2DS0A |
IC: DRAM memory; 4GbDRAM; 128Mx32bit; -40÷105°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E1536M32D4DE |
IC: DRAM memory; 48GbDRAM; -25÷85°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1536M32D4DEW |
IC: DRAM memory; 48GbDRAM; -25÷85°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046AT |
IC: DRAM memory; 32GbDRAM; -40÷105°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E256M16D1DS0 |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; -30÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E256M16D1FW0 |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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