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MT46V32M16CY5BITT |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 200MHz; TFBGA60; -40÷85°C |
MICRON TECHNOLOGY |
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MT47H128M16RT25EIT |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 400MHz; FBGA84; -40÷95°C |
MICRON TECHNOLOGY |
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MT47H32M16NF25EI |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 400MHz; FBGA84; -40÷95°C |
MICRON TECHNOLOGY |
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MT47H32M16NF25EIT |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 400MHz; FBGA84; -40÷95°C |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AI |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AIT |
IC: DRAM memory; 64MbDRAM; 4Mx16bitx4; 166MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC4M32B2B56A |
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; VFBGA90; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC8M16A2B46A |
IC: DRAM memory; 128MbDRAM; 8Mx16bit; 166MHz; VFBGA54; -40÷85°C |
MICRON TECHNOLOGY |
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MT48LC8M16A2P6AIT |
IC: DRAM memory; 128MbDRAM; 8Mx16bit; 166MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT53D1024M32D4DT |
IC: DRAM memory; 32GbDRAM; 1.866GHz; FBGA200; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E1536M32D4DE |
IC: DRAM memory; 48GbDRAM; 2.133GHz; -25÷85°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046AA |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046IT |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E256M16D1FW0 |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 2.133GHz; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E256M16D1FW0T |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 2.133GHz; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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MT53E256M32D1KS0I |
IC: DRAM memory; 8GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.95V |
MICRON TECHNOLOGY |
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MT53E256M32D2DS0 |
IC: DRAM memory; 8GbDRAM; 1.866GHz; -30÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT62F2G32D4DS023WT |
IC: DRAM memory; 64GbDRAM; 4.266GHz; -25÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT62F512M32D1DS0 |
IC: DRAM memory; 16GbDRAM; 4.266GHz; -25÷85°C |
MICRON TECHNOLOGY |
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MT62F512M32D1DS0AI |
IC: DRAM memory; 16GbDRAM; 4.266GHz; -40÷95°C; 1÷1.12V |
MICRON TECHNOLOGY |
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