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42S16100H-6TLI |
IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II |
ISSI |
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S80KS2564GACHV040 |
IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C |
INFINEON TECHNOLOGIES |
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MT40A512M16TD062 |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷105°C |
MICRON TECHNOLOGY |
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MT41K128M16JT125KT |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 800MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046A |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046AU |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046T |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E512M32D1ZW0WT |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT62F1G32D2DS023IT |
IC: DRAM memory; 32GbDRAM; 4.266GHz; -40÷95°C; 1.1V |
MICRON TECHNOLOGY |
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MT40A512M16TB062 |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT41K256M16TW107XP |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT41K256M16TW107XT |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT47H128M8SH25EI |
IC: DRAM memory; 1GbDRAM; 128Mx8bit; 400MHz; TFBGA60; -40÷95°C |
MICRON TECHNOLOGY |
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MT48LC4M16A2P6AI |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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MT53E1G16D1ZW046W |
IC: DRAM memory; 16GbDRAM; 1Gx16bit; 2.133GHz; -25÷85°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT53E1G32D2FW046AI |
IC: DRAM memory; 32GbDRAM; 2.133GHz; -25÷85°C |
MICRON TECHNOLOGY |
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4C128M16D3LC12BCNT |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.35V; 800MHz; 13.75ns; reel |
ALLIANCE MEMORY |
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AS4C512M16D4A62BIN |
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C |
ALLIANCE MEMORY |
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MT41J128M16JT093K |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.07GHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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AS4C8M32SA-6BINTR |
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 3.3V; 166MHz; 5.4ns; reel |
ALLIANCE MEMORY |
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