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BAS116TT1G |
Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V |
ONSEMI |
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BAS116V-7 |
Diode: switching; SMD; 85V; 0.215A; 3us; SOT563; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16.235 |
Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A |
NEXPERIA |
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BAS16HTW-13 |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16HTWQ-13 |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16HTWQ-13R |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16HYT116 |
Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A |
ROHM SEMICONDUCTOR |
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BAS16J.135 |
Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V |
NEXPERIA |
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BAS16M3T5G |
Diode: switching; SMD; 100V; 0.2A; 6ns; SOT723; Ufmax: 1.25V |
ONSEMI |
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BAS16Q-13-F |
Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; reel,tape |
DIODES INCORPORATED |
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BAS16R5G-TAI-0 |
Diode: switching; SMD; 150mA; 4ns; SC59; 1.25V; Ifsm: 2A |
TAIWAN SEMICONDUCTOR |
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BAS16SH6727XTSA1 |
Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A |
INFINEON TECHNOLOGIES |
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BAS16T-7-F |
Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1V; reel,tape |
DIODES INCORPORATED |
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BAS16TT1G |
Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA |
ONSEMI |
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BAS16TWQ-13R-F |
Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16V-7 |
Diode: switching; SMD; 75V; 0.3A; 4ns; SOT563; Ufmax: 1.25V |
DIODES INCORPORATED |
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BAS16VA-7 |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 715mV; Ifsm: 4A |
DIODES INCORPORATED |
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BAS16VV-7 |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A |
DIODES INCORPORATED |
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BAS16VVQ-7 |
Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A |
DIODES INCORPORATED |
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BAS16WF |
Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V |
NEXPERIA |
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