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MT53E512M32D1ZW0B |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -25÷85°C; 1.7÷1.95V |
MICRON TECHNOLOGY |
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MT46H64M16LFBF5IT |
IC: DRAM memory; 1GbDRAM; 64Mx32bit; 200MHz; FBGA60; -40÷85°C |
MICRON TECHNOLOGY |
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42S16160J-7TL |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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MT53E512M32D1ZW0BW |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷125°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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4C128M16MD2A-25BIN |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.8V; 400MHz; 18ns; FBGA134 |
ALLIANCE MEMORY |
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MT48LC4M16A2P6AJ |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; TSOP54 II; 0÷70°C |
MICRON TECHNOLOGY |
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AS4C32M16D3-12BCN |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.5V; 800MHz; 13.75ns |
ALLIANCE MEMORY |
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MT40A1G16TB062EF |
IC: DRAM memory; 16GbDRAM; 1Gx16bit; 1.6GHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT41K64M16TW107AJ |
IC: DRAM memory; 1GbDRAM; 64Mx32bit; 933MHz; FBGA96; -40÷125°C |
MICRON TECHNOLOGY |
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AS4C16M16SA-6BIN |
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54 |
ALLIANCE MEMORY |
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MT47H64M16NF25EMT |
IC: DRAM memory; 1GbDRAM; 64Mx32bit; 400MHz; FBGA84; 0÷85°C |
MICRON TECHNOLOGY |
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MT40A512M16TB062E |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT53E512M32D1ZW0T |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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42S16160J-7TLI |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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MT48LC16M16A2P6A |
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 166MHz; TSOP54 II; -40÷85°C |
MICRON TECHNOLOGY |
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4C256M16D3C-12BIN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96 |
ALLIANCE MEMORY |
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MT47H128M16RT25E |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 400MHz; FBGA84; 0÷85°C |
MICRON TECHNOLOGY |
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MT53E512M32D1ZW0AU |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.95V |
MICRON TECHNOLOGY |
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4C512M16MD4V053BIN |
IC: DRAM memory; 8GbSDRAM; 1866MHz; FBGA200; -40÷95°C |
ALLIANCE MEMORY |
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MT46H128M16LFDD4 |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 208MHz; -40÷85°C; 1.7÷1.95V |
MICRON TECHNOLOGY |
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