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AS4C8M32S-7TCNTR |
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86 |
ALLIANCE MEMORY |
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IS42S16160G-7TL |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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AS4C8M16SA-7BCN |
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54 |
ALLIANCE MEMORY |
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MT53E512M32D1ZW0BI |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT46H64M16LFBF5I |
IC: DRAM memory; 1GbDRAM; 64Mx32bit; 200MHz; -40÷85°C; 1.7÷1.95V |
MICRON TECHNOLOGY |
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MT41K256M16TW107P |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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AS4C1G32MD4V046BIN |
IC: DRAM memory; 32GbDRAM; FBGA200; -40÷95°C; in-tray |
ALLIANCE MEMORY |
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MT53E256M32D1KS0IL |
IC: DRAM memory; 8GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT41K256M16TW107A |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; -40÷105°C |
MICRON TECHNOLOGY |
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MT41K128M16JT125K |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 800MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT48LC16M16A2P6AG |
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 166MHz; TSOP54 II; 0÷70°C |
MICRON TECHNOLOGY |
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MT53E2G32D4DE046 |
IC: DRAM memory; 64GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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MT41K256M16TW107PT |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT41K64M16TW107IJ |
IC: DRAM memory; 1GbDRAM; 64Mx32bit; 933MHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT53D512M32D2DS0 |
IC: DRAM memory; 16GbDRAM; 1.866GHz; -30÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT46V32M16P5BJ |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 200MHz; TSOP66; 0÷70°C |
MICRON TECHNOLOGY |
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MT41J128M16JT125K |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 800MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT41K256M16TW107AT |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 933MHz; FBGA96; -40÷95°C |
MICRON TECHNOLOGY |
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MT41J128M16JT125 |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 800MHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT53E512M32D1ZW0W |
IC: DRAM memory; 16GbDRAM; 2.133GHz; -25÷85°C; 1.1÷1.17V |
MICRON TECHNOLOGY |
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Buy Now |