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4C512M16D3LB-12BCN |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 800MHz; 13.75ns |
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4C512M16D4A62BINTR |
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C |
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4C8M32MD2A-25BPCN |
IC: DRAM memory; 256MbDRAM; 8Mx32bit; 1.2÷1.8V; 400MHz; 18ns |
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AS4C128M16D2A-25BI |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 |
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AS4C128M8D2A-25BCN |
IC: DRAM memory; 1024MbDRAM; 128Mx8bit; 1.7÷1.9V; 400MHz; 400ps |
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AS4C16M32MD1-5BIN |
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 |
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AS4C1G16D4062BCNTR |
IC: DRAM memory; 16GbDRAM; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96 |
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AS4C1G8D4A-62BCN |
IC: DRAM memory; 8GbSDRAM; 1Gx8bit; 1.6GHz; FBGA78; 0÷95°C |
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AS4C1G8D4A-62BINTR |
IC: DRAM memory; 8GbSDRAM; 1Gx8bit; 1.6GHz; FBGA78; -40÷95°C; reel |
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AS4C2M32S-6BIN |
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90 |
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AS4C32M16D1-5BCN |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C |
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AS4C32M16MSA-6BIN |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54 |
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AS4C4M16D1A-5TCN |
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II |
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AS4C4M32S-6BINTR |
IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90 |
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AS4C512M8D3B-12BIN |
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C |
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AS4C512M8D4-83BCN |
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 |
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AS4C64M16D1-6TCN |
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 |
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AS4C64M16D3B-12BCN |
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96 |
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AS4C64M16D3LB-12BI |
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96 |
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AS4C64M16MD1A-5BIN |
IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns |
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