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MT53E768M32D4DT0WT |
IC: DRAM memory; 24GbDRAM; 1.866GHz; -25÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT62F1G32D2DS023 |
IC: DRAM memory; 32GbDRAM; 4.266GHz; -25÷85°C; 1.1V |
MICRON TECHNOLOGY |
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MT62F512M32D1DS0AI |
IC: DRAM memory; 16GbDRAM; 4.266GHz; -40÷95°C; 1÷1.12V |
MICRON TECHNOLOGY |
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42S16100H-6TL |
IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II |
ISSI |
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43R16160F-6TL |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II |
ISSI |
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43R16160F-6TLI |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II |
ISSI |
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45S16160J-7TLA2 |
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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45S16800F-7TLA1 |
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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45S16800F-7TLA2 |
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II |
ISSI |
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4C128M16D2A-25BAN |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 |
ALLIANCE MEMORY |
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4C128M16D3LC-12BCN |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.35V; 800MHz; 13.75ns |
ALLIANCE MEMORY |
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4C128M32MD2A18BINT |
IC: DRAM memory; 4GbDRAM; 128Mx32bit; 1.8V; 533MHz; 18ns; FBGA134 |
ALLIANCE MEMORY |
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4C256M16D3LC-12BCN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.35V; 800MHz; 13.75ns |
ALLIANCE MEMORY |
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4C256M16D3LC12BAN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.35V; 800MHz; 13.75ns |
ALLIANCE MEMORY |
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4C256M16D4-75BINTR |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1333MHz; 14.25ns; reel |
ALLIANCE MEMORY |
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4C256M16D4-83BINTR |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96 |
ALLIANCE MEMORY |
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4C256M32MD4-062BAN |
IC: DRAM memory; 8GbDRAM; 1.1÷1.8V; 1.6GHz; 625ps; -40÷105°C |
ALLIANCE MEMORY |
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4C32M16D1A-5TCNTR |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II |
ALLIANCE MEMORY |
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4C32M16D2A-25BINTR |
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 |
ALLIANCE MEMORY |
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4C512M16D3LA-10BAN |
IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns |
ALLIANCE MEMORY |
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