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4C256M16D3C-10BIN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.5V; 933MHz; 13.91ns; FBGA96 |
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4C256M16D3C12BINTR |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96 |
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4C512M8D3LC-12BIN |
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 |
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4C64M16D2A-25BINTR |
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 |
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AS4C128M8D2A-25BIN |
IC: DRAM memory; 1024MbDRAM; 128Mx8bit; 1.7÷1.9V; 400MHz; 400ps |
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AS4C256M16D4-75BCN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1333MHz; 14.25ns |
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AS4C256M16D4-83BCN |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96 |
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AS4C8M16SA-6BINTR |
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54 |
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MT40A2G8SA062EF |
IC: DRAM memory; 16GbDRAM; 2Gx8; 1.6GHz; FBGA78; 0÷95°C; 1.14÷1.26V |
MICRON TECHNOLOGY |
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MT41K256M16TW093 |
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.07GHz; FBGA96; 0÷95°C |
MICRON TECHNOLOGY |
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MT47H64M8SH25EH |
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 400MHz; TFBGA60; 0÷85°C |
MICRON TECHNOLOGY |
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S70KS1282GABHV020 |
IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C |
INFINEON TECHNOLOGIES |
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S80KS5122GABHB020 |
IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C |
INFINEON TECHNOLOGIES |
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4C128M16D3LC-12BAN |
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.35V; 800MHz; 13.75ns |
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4C128M32MD2A-25BIN |
IC: DRAM memory; 4GbDRAM; 128Mx32bit; 1.8V; 400MHz; 18ns; FBGA134 |
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4C128M32MD2A25BINT |
IC: DRAM memory; 4GbDRAM; 128Mx32bit; 1.8V; 400MHz; 18ns; FBGA134 |
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4C128M32MD4-062BAN |
IC: DRAM memory; 4GbDRAM; 128Mx32bit; 1.1÷1.8V; 1.6GHz; 625ps |
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4C512M32MD4V046BIN |
IC: DRAM memory; 16GbDRAM; FBGA200; -40÷95°C; in-tray |
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4C64M16MD1A-5BINTR |
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 200MHz; 15ns; FBGA60 |
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AS4C16M16SA-6BINTR |
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 |
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